Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

F. Gámiz; J. Banqueri; J. E. Carceller; J. A. López-Villanueva

doi:10.1016/0038-1101(94)00129-4

Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

F. Gámiz
, J. Banqueri
, J. E. Carceller
, J. A. López-Villanueva

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

8 Citas (Scopus)

Resumen

The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation.

Idioma original	Inglés
Páginas (desde-hasta)	611-614
Número de páginas	4
Publicación	Solid State Electronics
Volumen	38
N.º	3
DOI	https://doi.org/10.1016/0038-1101(94)00129-4
Estado	Publicada - 1 ene. 1995
Publicado de forma externa	Sí

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@article{4338e8f6ffa54a48a59ca9486cb58c8c,

title = "Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs",

abstract = "The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation.",

author = "F. G{\'a}miz and J. Banqueri and Carceller, \{J. E.\} and L{\'o}pez-Villanueva, \{J. A.\}",

year = "1995",

month = jan,

day = "1",

doi = "10.1016/0038-1101(94)00129-4",

language = "English",

volume = "38",

pages = "611--614",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "3",

}

TY - JOUR

T1 - Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

AU - Gámiz, F.

AU - Banqueri, J.

AU - Carceller, J. E.

AU - López-Villanueva, J. A.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation.

AB - The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation.

UR - https://www.scopus.com/pages/publications/0029276282

U2 - 10.1016/0038-1101(94)00129-4

DO - 10.1016/0038-1101(94)00129-4

M3 - Article

AN - SCOPUS:0029276282

SN - 0038-1101

VL - 38

SP - 611

EP - 614

JO - Solid State Electronics

JF - Solid State Electronics

IS - 3

ER -

Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

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