TY - JOUR
T1 - Effects of oxide-charge space correlation on electron mobility in inversion layers
AU - Gamiz, F.
AU - Melchor, I.
AU - Palma, A.
AU - Cartujo, P.
AU - Lopez-Villanueva, J. A.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - The effect of the space correlation of oxide charges on the effective mobility of electrons in the channel of an NMOS transistor has been studied. Mobility has been obtained by a single-electron Monte Carlo simulation in which space correlation has been included simultaneously with other effects such as screening of point charges by mobile carriers, image charges, and phonon and surface-roughness scattering. Results have been obtained by assuming different degrees of space correlation for several temperature values and diverse oxide-charge concentrations and positions. The charged-centre space correlation is shown to have a noticeable effect on the electron mobility.
AB - The effect of the space correlation of oxide charges on the effective mobility of electrons in the channel of an NMOS transistor has been studied. Mobility has been obtained by a single-electron Monte Carlo simulation in which space correlation has been included simultaneously with other effects such as screening of point charges by mobile carriers, image charges, and phonon and surface-roughness scattering. Results have been obtained by assuming different degrees of space correlation for several temperature values and diverse oxide-charge concentrations and positions. The charged-centre space correlation is shown to have a noticeable effect on the electron mobility.
UR - https://www.scopus.com/pages/publications/0028424994
U2 - 10.1088/0268-1242/9/5/015
DO - 10.1088/0268-1242/9/5/015
M3 - Article
AN - SCOPUS:0028424994
SN - 0268-1242
VL - 9
SP - 1102
EP - 1107
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 5
M1 - 015
ER -