Effects of oxygen related defects on the electrical and thermal behavior of a n⁺ - p junction

A method for the characterization of deep levels in semiconductors by employing an analytical expression of the current noise density at low frequencies in p-n junctions was proposed. The method was applied to oxygen-related defects in silicon. The different methods of electrical characterization of these defects in p-n junctions, including current-voltage curves, leakage current, deep level transient spectroscopy and low frequency noise were reviewed. It was found that the silicon p-n junction with these levels shows a mutable electrical operation of the shallower center, acting as an electron trap at low temperatures and as a hole trap at room temperatures.