Effects of oxygen-related traps in silicon on the generation-recombination noise

  • J. A.Jiménez Tejada
  • , J. A.López Villanueva
  • , A. Godoy
  • , J. E. Carceller
  • , F. M. Gómez-Campos
  • , S. Rodríguez-Bolívar

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

This work shows the effects of oxygen related traps in silicon on the generation-recombination noise and presents a procedure to determine their capture cross-sections and densities. It compares the current noise spectral density measured in p - n junctions fabricated on Czochralski-grown silicon (Cz-Si) with an analytical expression proposed by us. In those systems where two or more levels are present in the bandgap additional electrical measurements are necessary in order to discern which level is the origin of the noise. Multiple oxygen related traps can be found in the literature. A thorough study of their associated levels, and of different techniques employed to characterize them is made in this paper. We have found that one of these levels behaves both as a minority or majority trap, depending on the temperature. The parameters proposed for this level can link different results found in the literature.

Idioma originalInglés
Título de la publicación alojadaNOISE AND FLUCTUATIONS
Subtítulo de la publicación alojada18th International Conference on Noise and Fluctuations - ICNF 2005
Páginas717-720
Número de páginas4
DOI
EstadoPublicada - 25 ago. 2005
Publicado de forma externa
EventoNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 - Salamanca, Espana
Duración: 19 set. 200523 set. 2005

Serie de la publicación

NombreAIP Conference Proceedings
Volumen780
ISSN (versión impresa)0094-243X
ISSN (versión digital)1551-7616

Conferencia

ConferenciaNOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005
País/TerritorioEspana
CiudadSalamanca
Período19/09/0523/09/05

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