Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

Juan A. Lopez-Villanueva; Pedro Cartujo-Cassinello; Francisco Gamiz; Jesus Banqueri; Alberto J. Palma

doi:10.1109/16.817579

Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

Juan A. Lopez-Villanueva
, Pedro Cartujo-Cassinello
, Francisco Gamiz
, Jesus Banqueri
, Alberto J. Palma

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

60 Citas (Scopus)

Resumen

The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFET's, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been analyzed in volume-inversion transistors and compared with the value obtained in conventional MOSFETs. The minority-carrier distribution has been found to be even closer to the interfaces in volume-inversion transistors with very thin films, and therefore, some of the advantages assumed for these devices are ungrounded. Finally, the overall advantages and disadvantages of double-gate MOSFET's over their conventional counterparts are discussed.

Idioma original	Inglés
Páginas (desde-hasta)	141-146
Número de páginas	6
Publicación	IEEE Transactions on Electron Devices
Volumen	47
N.º	1
DOI	https://doi.org/10.1109/16.817579
Estado	Publicada - 1 ene. 2000
Publicado de forma externa	Sí

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abstract = "The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFET's, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been analyzed in volume-inversion transistors and compared with the value obtained in conventional MOSFETs. The minority-carrier distribution has been found to be even closer to the interfaces in volume-inversion transistors with very thin films, and therefore, some of the advantages assumed for these devices are ungrounded. Finally, the overall advantages and disadvantages of double-gate MOSFET's over their conventional counterparts are discussed.",

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AU - Cartujo-Cassinello, Pedro

AU - Gamiz, Francisco

AU - Banqueri, Jesus

AU - Palma, Alberto J.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFET's, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been analyzed in volume-inversion transistors and compared with the value obtained in conventional MOSFETs. The minority-carrier distribution has been found to be even closer to the interfaces in volume-inversion transistors with very thin films, and therefore, some of the advantages assumed for these devices are ungrounded. Finally, the overall advantages and disadvantages of double-gate MOSFET's over their conventional counterparts are discussed.

AB - The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFET's, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been analyzed in volume-inversion transistors and compared with the value obtained in conventional MOSFETs. The minority-carrier distribution has been found to be even closer to the interfaces in volume-inversion transistors with very thin films, and therefore, some of the advantages assumed for these devices are ungrounded. Finally, the overall advantages and disadvantages of double-gate MOSFET's over their conventional counterparts are discussed.

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Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

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