Electron transport in silicon-on-insulator devices

The electron transport in single-gate and double-gate silicon-on-insulator devices is studied as a function of the transverse electric field and the silicon layer thickness, with particular attention on the evaluation of stationary drift velocity and low-field mobility at room temperature. The effects of phonon scattering, surface roughness scattering, and Coulomb scattering were taken into account. The role played by each scattering mechanism was carefully analyzed as a function of silicon slab thickness and transverse effective field for both devices. It was demonstrated that the contributions of surface scattering mechanisms are by no means insignificant.