Electron transport in ultrathin double-gate SOI devices

F. Gámiz; J. B. Roldán; J. A. López-Villanueva; F. Jiménez-Molinos; J. E. Carceller

doi:10.1016/S0167-9317(01)00635-9

Electron transport in ultrathin double-gate SOI devices

F. Gámiz
, J. B. Roldán
, J. A. López-Villanueva
, F. Jiménez-Molinos
, J. E. Carceller

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

2 Citas (Scopus)

Resumen

Electron transport properties in ultrathin double-gate devices was studied. The structure studied consisted of an undoped silicon films sandwiched between two oxide layers. The electron mobility behavior in double-gate silicon on insulator silicon inversion layers was studied by Monte Carlo simulation. The effects of phonon scattering, surface roughness scattering and Coulomb scattering were analyzed as a function of silicon slab thickness. A range of silicon layer thicknesses with improved electron mobility was observed due to the effect of volume inversion.

Idioma original	Inglés
Páginas (desde-hasta)	423-427
Número de páginas	5
Publicación	Microelectronic Engineering
Volumen	59
N.º	1-4
DOI	https://doi.org/10.1016/S0167-9317(01)00635-9
Estado	Publicada - 1 nov. 2001
Publicado de forma externa	Sí
Evento	12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italia Duración: 20 jun. 2001 → 23 jun. 2001

Acceder al documento

10.1016/S0167-9317(01)00635-9

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{46b8ba0998c44fc8b7bfe144f254004e,

title = "Electron transport in ultrathin double-gate SOI devices",

abstract = "Electron transport properties in ultrathin double-gate devices was studied. The structure studied consisted of an undoped silicon films sandwiched between two oxide layers. The electron mobility behavior in double-gate silicon on insulator silicon inversion layers was studied by Monte Carlo simulation. The effects of phonon scattering, surface roughness scattering and Coulomb scattering were analyzed as a function of silicon slab thickness. A range of silicon layer thicknesses with improved electron mobility was observed due to the effect of volume inversion.",

keywords = "Double gate MOSFETs, Electron mobility, Monte Carlo method, Silicon-on-insulator",

author = "F. G{\'a}miz and Rold{\'a}n, \{J. B.\} and L{\'o}pez-Villanueva, \{J. A.\} and F. Jim{\'e}nez-Molinos and Carceller, \{J. E.\}",

year = "2001",

month = nov,

day = "1",

doi = "10.1016/S0167-9317(01)00635-9",

language = "English",

volume = "59",

pages = "423--427",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier BV",

number = "1-4",

note = "12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) ; Conference date: 20-06-2001 Through 23-06-2001",

}

TY - JOUR

T1 - Electron transport in ultrathin double-gate SOI devices

AU - Gámiz, F.

AU - Roldán, J. B.

AU - López-Villanueva, J. A.

AU - Jiménez-Molinos, F.

AU - Carceller, J. E.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - Electron transport properties in ultrathin double-gate devices was studied. The structure studied consisted of an undoped silicon films sandwiched between two oxide layers. The electron mobility behavior in double-gate silicon on insulator silicon inversion layers was studied by Monte Carlo simulation. The effects of phonon scattering, surface roughness scattering and Coulomb scattering were analyzed as a function of silicon slab thickness. A range of silicon layer thicknesses with improved electron mobility was observed due to the effect of volume inversion.

AB - Electron transport properties in ultrathin double-gate devices was studied. The structure studied consisted of an undoped silicon films sandwiched between two oxide layers. The electron mobility behavior in double-gate silicon on insulator silicon inversion layers was studied by Monte Carlo simulation. The effects of phonon scattering, surface roughness scattering and Coulomb scattering were analyzed as a function of silicon slab thickness. A range of silicon layer thicknesses with improved electron mobility was observed due to the effect of volume inversion.

KW - Double gate MOSFETs

KW - Electron mobility

KW - Monte Carlo method

KW - Silicon-on-insulator

UR - https://www.scopus.com/pages/publications/0035498586

U2 - 10.1016/S0167-9317(01)00635-9

DO - 10.1016/S0167-9317(01)00635-9

M3 - Conference article

AN - SCOPUS:0035498586

SN - 0167-9317

VL - 59

SP - 423

EP - 427

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

T2 - 12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001)

Y2 - 20 June 2001 through 23 June 2001

ER -

Electron transport in ultrathin double-gate SOI devices

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto