TY - JOUR
T1 - Electron trapping and detrapping in near-interfacial traps during Fowler-Nordheim tunneling injection at 77 K
AU - López-Villanueva, J. A.
AU - Carceller, J. E.
AU - Gámiz, F.
AU - Banqueri, J.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - Results of injection experiments at 77 K, alternated with ascensions to room temperature are reported. Two trapping behaviours have been identified, with a relationship between them being noted. Both donor and acceptor interface traps have also been observed to be created. Results can be interpreted with a model based on oxide traps with energies above the silicon conduction band.
AB - Results of injection experiments at 77 K, alternated with ascensions to room temperature are reported. Two trapping behaviours have been identified, with a relationship between them being noted. Both donor and acceptor interface traps have also been observed to be created. Results can be interpreted with a model based on oxide traps with energies above the silicon conduction band.
UR - https://www.scopus.com/pages/publications/0029323837
U2 - 10.1016/0167-9317(95)00066-H
DO - 10.1016/0167-9317(95)00066-H
M3 - Article
AN - SCOPUS:0029323837
SN - 0167-9317
VL - 28
SP - 317
EP - 320
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
ER -