Experimental determination of the effective mobility in NMOSFETs: a comparative study

J. Banqueri; J. A. López-Villanueva; P. Cartujo-Cassinello; S. Rodríguez; J. E. Carceller

doi:10.1016/S0038-1101(98)00307-4

Experimental determination of the effective mobility in NMOSFETs: a comparative study

J. Banqueri
, J. A. López-Villanueva
, P. Cartujo-Cassinello
, S. Rodríguez
, J. E. Carceller

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

Resumen

We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.

Idioma original	Inglés
Páginas (desde-hasta)	701-707
Número de páginas	7
Publicación	Solid State Electronics
Volumen	43
N.º	4
DOI	https://doi.org/10.1016/S0038-1101(98)00307-4
Estado	Publicada - 1 ene. 1999
Publicado de forma externa	Sí

Acceder al documento

10.1016/S0038-1101(98)00307-4

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{7de305dc5a8547f198d37b874b8787ab,

title = "Experimental determination of the effective mobility in NMOSFETs: a comparative study",

abstract = "We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.",

author = "J. Banqueri and L{\'o}pez-Villanueva, \{J. A.\} and P. Cartujo-Cassinello and S. Rodr{\'i}guez and Carceller, \{J. E.\}",

year = "1999",

month = jan,

day = "1",

doi = "10.1016/S0038-1101(98)00307-4",

language = "English",

volume = "43",

pages = "701--707",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "4",

}

TY - JOUR

T1 - Experimental determination of the effective mobility in NMOSFETs

T2 - a comparative study

AU - Banqueri, J.

AU - López-Villanueva, J. A.

AU - Cartujo-Cassinello, P.

AU - Rodríguez, S.

AU - Carceller, J. E.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.

AB - We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.

UR - https://www.scopus.com/pages/publications/0345073158

U2 - 10.1016/S0038-1101(98)00307-4

DO - 10.1016/S0038-1101(98)00307-4

M3 - Article

AN - SCOPUS:0345073158

SN - 0038-1101

VL - 43

SP - 701

EP - 707

JO - Solid State Electronics

JF - Solid State Electronics

IS - 4

ER -

Experimental determination of the effective mobility in NMOSFETs: a comparative study

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto