TY - JOUR
T1 - Experimental determination of the effective mobility in NMOSFETs
T2 - a comparative study
AU - Banqueri, J.
AU - López-Villanueva, J. A.
AU - Cartujo-Cassinello, P.
AU - Rodríguez, S.
AU - Carceller, J. E.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.
AB - We present a comparison between the different methods reported in the literature to experimentally determine the electron mobility in the channel of a MOSFET. In order to accurately obtain the mobility for use in an I-V model a suitable determination of inversion charge and electric potential is shown to be relevant. Numerical simulation is demonstrated to be a powerful tool to carry out mobility extraction, particularly in the moderate-inversion region, and to accurately calculate the effective electric field.
UR - https://www.scopus.com/pages/publications/0345073158
U2 - 10.1016/S0038-1101(98)00307-4
DO - 10.1016/S0038-1101(98)00307-4
M3 - Article
AN - SCOPUS:0345073158
SN - 0038-1101
VL - 43
SP - 701
EP - 707
JO - Solid State Electronics
JF - Solid State Electronics
IS - 4
ER -