TY - GEN
T1 - Improvement of the k · p approach for describing silicon quantum dots
AU - Rodriguez-Bolivar, S.
AU - Gómez-Campos, F. M.
AU - Luque-Rodríguez, A.
AU - López-Villanueva, J. A.
AU - Jiménez-Tejada, J. A.
AU - Lara-Bullejos, P.
AU - Carceller, J. E.
PY - 2009/4/24
Y1 - 2009/4/24
N2 - We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k·p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.
AB - We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k·p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.
UR - https://www.scopus.com/pages/publications/64949149930
U2 - 10.1109/SCED.2009.4800446
DO - 10.1109/SCED.2009.4800446
M3 - Conference contribution
AN - SCOPUS:64949149930
SN - 9781424428397
T3 - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
SP - 124
EP - 127
BT - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
T2 - 2009 Spanish Conference on Electron Devices, CDE'09
Y2 - 11 February 2009 through 13 February 2009
ER -