Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids

Francisco M. Gomez-Campos; Erik S. Skibinsky-Gitlin; S. Rodriguez-Bolivar; Marco Califano; Panagiotis Rodosthenous; Juan A. Lopez-Villanueva; Juan E. Carceller

doi:10.1109/CDE52135.2021.9455730

Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids

Francisco M. Gomez-Campos
, Erik S. Skibinsky-Gitlin
, S. Rodriguez-Bolivar
, Marco Califano
, Panagiotis Rodosthenous
, Juan A. Lopez-Villanueva
, Juan E. Carceller

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

Resumen

Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 Å radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.

Idioma original	Inglés
Título de la publicación alojada	Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	86-89
Número de páginas	4
ISBN (versión digital)	9781665444521
DOI	https://doi.org/10.1109/CDE52135.2021.9455730
Estado	Publicada - 9 jun. 2021
Publicado de forma externa	Sí
Evento	13th Spanish Conference on Electron Devices, CDE 2021 - Sevilla, Espana Duración: 9 jun. 2021 → 11 jun. 2021

Serie de la publicación

Nombre	Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

Conferencia

Conferencia	13th Spanish Conference on Electron Devices, CDE 2021
País/Territorio	Espana
Ciudad	Sevilla
Período	9/06/21 → 11/06/21

ODS de las Naciones Unidas

Este resultado contribuye a los siguientes Objetivos de Desarrollo Sostenible

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10.1109/CDE52135.2021.9455730

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Gomez-Campos, F. M., Skibinsky-Gitlin, E. S., Rodriguez-Bolivar, S., Califano, M., Rodosthenous, P., Lopez-Villanueva, J. A., & Carceller, J. E. (2021). Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. En Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021 (pp. 86-89). Artículo 9455730 (Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CDE52135.2021.9455730

Gomez-Campos, Francisco M. ; Skibinsky-Gitlin, Erik S. ; Rodriguez-Bolivar, S. et al. / Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 86-89 (Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021).

@inproceedings{b436ec4a6d154751a02e347e9c87f343,

title = "Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids",

abstract = "Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 {\AA} radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.",

keywords = "miniband structure, photovoltaic device, quantum dot, quantum dot solids",

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note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 13th Spanish Conference on Electron Devices, CDE 2021 ; Conference date: 09-06-2021 Through 11-06-2021",

year = "2021",

month = jun,

day = "9",

doi = "10.1109/CDE52135.2021.9455730",

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series = "Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021",

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Gomez-Campos, FM, Skibinsky-Gitlin, ES, Rodriguez-Bolivar, S, Califano, M, Rodosthenous, P, Lopez-Villanueva, JA & Carceller, JE 2021, Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. En Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021., 9455730, Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, Institute of Electrical and Electronics Engineers Inc., pp. 86-89, 13th Spanish Conference on Electron Devices, CDE 2021, Sevilla, Espana, 9/06/21. https://doi.org/10.1109/CDE52135.2021.9455730

Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. / Gomez-Campos, Francisco M.; Skibinsky-Gitlin, Erik S.; Rodriguez-Bolivar, S. et al.
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 86-89 9455730 (Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021).

Producción científica: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids

AU - Gomez-Campos, Francisco M.

AU - Skibinsky-Gitlin, Erik S.

AU - Rodriguez-Bolivar, S.

AU - Califano, Marco

AU - Rodosthenous, Panagiotis

AU - Lopez-Villanueva, Juan A.

AU - Carceller, Juan E.

PY - 2021/6/9

Y1 - 2021/6/9

N2 - Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 Å radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.

AB - Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 Å radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.

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KW - photovoltaic device

KW - quantum dot

KW - quantum dot solids

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DO - 10.1109/CDE52135.2021.9455730

M3 - Conference contribution

AN - SCOPUS:85114437358

T3 - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

SP - 86

EP - 89

BT - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 13th Spanish Conference on Electron Devices, CDE 2021

Y2 - 9 June 2021 through 11 June 2021

ER -

Gomez-Campos FM, Skibinsky-Gitlin ES, Rodriguez-Bolivar S, Califano M, Rodosthenous P, Lopez-Villanueva JA et al. Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids. En Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 86-89. 9455730. (Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021). doi: 10.1109/CDE52135.2021.9455730

Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids

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