TY - GEN
T1 - Influence of dopant profiles and traps on the low frequency noise of four gate transistors
AU - Rodríguez, A. Luque
AU - Tejada, J. A.Jiménez
AU - Villanueva, J. A.López
AU - Godoy, A.
AU - BuUejos, P. L.
AU - Gómez-Campos, M.
PY - 2009/7/21
Y1 - 2009/7/21
N2 - This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-Si0 2 interfaces.
AB - This work presents a study that correlates technological parameters of SOI four-gate field-effect-transistors (G4-FET) with their output characteristics and low frequency noise in order to optimize their performance. This structure can control the position and size of the conduction channel by the application of adequate voltages to its four gates (front and back MOS gates and two lateral JFET gates). Due to this reason, many parameters can affect its behavior. We have studied the dependence of I-V characteristics and low frequency noise with parameters such as the doping profile in the channel, drain and source regions, impurities in the volume of the semiconductor, and traps in the Si-Si0 2 interfaces.
KW - 1/f noise
KW - Four-gate transistors
KW - Generation recombination noise
UR - https://www.scopus.com/pages/publications/67650512105
U2 - 10.1063/1.3140542
DO - 10.1063/1.3140542
M3 - Conference contribution
AN - SCOPUS:67650512105
SN - 9780735406650
T3 - AIP Conference Proceedings
SP - 585
EP - 588
BT - Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009
T2 - 20th International Conference on Noise and Fluctuations, ICNF 2009
Y2 - 14 June 2009 through 19 June 2009
ER -