Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide-semiconductor field-effect transistors

INIS

• amplitudes 100%
• carrier density 16%
• carriers 16%
• charges 16%
• data 16%
• depth 16%
• electric fields 16%
• electron mobility 50%
• electrons 16%
• field effect transistors 100%
• fluctuations 100%
• gain 16%
• layers 16%
• metals 100%
• mobility 100%
• oxides 100%
• quantization 16%
• randomness 100%
• scattering 16%
• semiconductor materials 100%
• signals 100%
• silicon oxides 16%
• simulation 16%
• trapping 16%
• traps 16%
• voltage 16%

Engineering

• Carrier Concentration 33%
• Drain Voltage 33%
• Electric Field 33%
• Gate Voltage 33%
• Good Agreement 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Scattering Coefficient 33%
• Signal Amplitude 100%
• Silicon Dioxide 33%
• Single Channel 33%

Material Science

• Carrier Concentration 33%
• Electron Mobility 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxide Compound 66%
• Silicon Dioxide 33%