TY - JOUR
T1 - Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers
T2 - A Monte Carlo study
AU - Gámiz, F.
AU - López-Villanueva, J. A.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - The effects of the presence of charged centers of different sign on the electron mobility in n-channel metal-oxide-semiconductor transistors are studied by a Monte Carlo simulation. By solving the Poisson equation for the potential fluctuations, an expression for the Coulomb-scattering rate when there are charged centers of different sign is provided. In addition, it is shown that, when charges of different sign exist in the structure, local band-bending fluctuations are greater, thus resulting in lower electron mobility. In contrast, since in this case the potential mean value is lower, the influence of the charged centers on the threshold voltage is lesser. The electron mobility in compensated substrates is also analyzed.
AB - The effects of the presence of charged centers of different sign on the electron mobility in n-channel metal-oxide-semiconductor transistors are studied by a Monte Carlo simulation. By solving the Poisson equation for the potential fluctuations, an expression for the Coulomb-scattering rate when there are charged centers of different sign is provided. In addition, it is shown that, when charges of different sign exist in the structure, local band-bending fluctuations are greater, thus resulting in lower electron mobility. In contrast, since in this case the potential mean value is lower, the influence of the charged centers on the threshold voltage is lesser. The electron mobility in compensated substrates is also analyzed.
UR - https://www.scopus.com/pages/publications/36449003623
U2 - 10.1063/1.360209
DO - 10.1063/1.360209
M3 - Article
AN - SCOPUS:36449003623
SN - 0021-8979
VL - 78
SP - 1787
EP - 1792
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 3
ER -