Influence of the doping profile on electron mobility in a MOSFET

F. Gamiz; J. A. Lopez-Villanueva; J. B. Roldan; J. E. Carceller

doi:10.1109/16.543043

Influence of the doping profile on electron mobility in a MOSFET

F. Gamiz
, J. A. Lopez-Villanueva
, J. B. Roldan
, J. E. Carceller

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

2 Citas (Scopus)

Resumen

In this work, the actual effect of the doping profile on electron mobility in MOSFET channels has been studied. For this purpose, a one-electron Monte Carlo simulation has been used to calculate the electron mobility. The influence on the mobility of several ion-implanted profiles typical of present technology and of diffused profiles have been compared.

Idioma original	Inglés
Páginas (desde-hasta)	2023-2025
Número de páginas	3
Publicación	IEEE Transactions on Electron Devices
Volumen	43
N.º	11
DOI	https://doi.org/10.1109/16.543043
Estado	Publicada - 1 ene. 1996
Publicado de forma externa	Sí

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abstract = "In this work, the actual effect of the doping profile on electron mobility in MOSFET channels has been studied. For this purpose, a one-electron Monte Carlo simulation has been used to calculate the electron mobility. The influence on the mobility of several ion-implanted profiles typical of present technology and of diffused profiles have been compared.",

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AU - Roldan, J. B.

AU - Carceller, J. E.

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Influence of the doping profile on electron mobility in a MOSFET

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