Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

F. Gámiz; J. A. López-Villanueva; J. Banqueri; J. E. Carceller

doi:10.1109/16.381999

Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

F. Gámiz
, J. A. López-Villanueva
, J. Banqueri
, J. E. Carceller

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

19 Citas (Scopus)

Resumen

To characterize the effect of oxide-charge distribution on electron mobility in a MOSFET channel, a more precise method for obtaining the oxide-charge profile than C-V measurement is needed. We have shown by Monte Carlo simulation that the effective interface-charge concentration obtained from threshold voltage measurements does not reproduce the actual effect that the oxide charge has on electron mobility. It is therefore absolutely necessary to know the real profile of the charge distribution. An analytical expression to obtain the interface-charge concentration which correctly models the effect of the actual oxide-charge distribution is calculated from Monte Carlo results.

Idioma original	Inglés
Páginas (desde-hasta)	999-1004
Número de páginas	6
Publicación	IEEE Transactions on Electron Devices
Volumen	42
N.º	5
DOI	https://doi.org/10.1109/16.381999
Estado	Publicada - 1 ene. 1995
Publicado de forma externa	Sí

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abstract = "To characterize the effect of oxide-charge distribution on electron mobility in a MOSFET channel, a more precise method for obtaining the oxide-charge profile than C-V measurement is needed. We have shown by Monte Carlo simulation that the effective interface-charge concentration obtained from threshold voltage measurements does not reproduce the actual effect that the oxide charge has on electron mobility. It is therefore absolutely necessary to know the real profile of the charge distribution. An analytical expression to obtain the interface-charge concentration which correctly models the effect of the actual oxide-charge distribution is calculated from Monte Carlo results.",

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AU - Banqueri, J.

AU - Carceller, J. E.

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AB - To characterize the effect of oxide-charge distribution on electron mobility in a MOSFET channel, a more precise method for obtaining the oxide-charge profile than C-V measurement is needed. We have shown by Monte Carlo simulation that the effective interface-charge concentration obtained from threshold voltage measurements does not reproduce the actual effect that the oxide charge has on electron mobility. It is therefore absolutely necessary to know the real profile of the charge distribution. An analytical expression to obtain the interface-charge concentration which correctly models the effect of the actual oxide-charge distribution is calculated from Monte Carlo results.

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Influence of the Oxide-Charge Distribution Profile on Electron Mobility in MOSFET's

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