Modeling effects of electron-velocity overshoot in a MOSFET

J. B. Roldán; F. Gámiz; J. A. López-Villanueva; J. E. Carceller

doi:10.1109/16.568047

Modeling effects of electron-velocity overshoot in a MOSFET

J. B. Roldán
, F. Gámiz
, J. A. López-Villanueva
, J. E. Carceller

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

55 Citas (Scopus)

Resumen

A simple analytical expression to account for electron-velocity overshoot effects on the performance of very short-channel MOSFET's has been obtained. This new model can be easily included in circuit simulators of systems with a huge number of components. The influence of temperature and low-field mobility on the increase of MOSFET transconductance produced by electron-velocity overshoot as channel lengths are reduced can be easily taken into account in our model. The accuracy of this model has been verified by reproducing experimental and simulated data reported by other authors.

Idioma original	Inglés
Páginas (desde-hasta)	841-846
Número de páginas	6
Publicación	IEEE Transactions on Electron Devices
Volumen	44
N.º	5
DOI	https://doi.org/10.1109/16.568047
Estado	Publicada - 1 dic. 1997
Publicado de forma externa	Sí

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AU - Carceller, J. E.

PY - 1997/12/1

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Modeling effects of electron-velocity overshoot in a MOSFET

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