Monte Carlo simulation of electron mobility in silicon-on-insulator structures

F. Gámiz; J. B. Roldán; J. A. López-Villanueva; P. Cartujo-Cassinello; F. Jiménez-Molinos

doi:10.1016/S0038-1101(02)00149-1

Monte Carlo simulation of electron mobility in silicon-on-insulator structures

F. Gámiz
, J. B. Roldán
, J. A. López-Villanueva
, P. Cartujo-Cassinello
, F. Jiménez-Molinos

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

12 Citas (Scopus)

Resumen

A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.

Idioma original	Inglés
Páginas (desde-hasta)	1715-1721
Número de páginas	7
Publicación	Solid State Electronics
Volumen	46
N.º	11
DOI	https://doi.org/10.1016/S0038-1101(02)00149-1
Estado	Publicada - 1 nov. 2002
Publicado de forma externa	Sí

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abstract = "A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.",

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AU - Gámiz, F.

AU - Roldán, J. B.

AU - López-Villanueva, J. A.

AU - Cartujo-Cassinello, P.

AU - Jiménez-Molinos, F.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.

AB - A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.

UR - https://www.scopus.com/pages/publications/0036839339

U2 - 10.1016/S0038-1101(02)00149-1

DO - 10.1016/S0038-1101(02)00149-1

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JO - Solid State Electronics

JF - Solid State Electronics

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ER -

Monte Carlo simulation of electron mobility in silicon-on-insulator structures

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