TY - JOUR
T1 - Monte Carlo simulation of electron mobility in silicon-on-insulator structures
AU - Gámiz, F.
AU - Roldán, J. B.
AU - López-Villanueva, J. A.
AU - Cartujo-Cassinello, P.
AU - Jiménez-Molinos, F.
PY - 2002/11/1
Y1 - 2002/11/1
N2 - A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.
AB - A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied.
UR - https://www.scopus.com/pages/publications/0036839339
U2 - 10.1016/S0038-1101(02)00149-1
DO - 10.1016/S0038-1101(02)00149-1
M3 - Article
AN - SCOPUS:0036839339
SN - 0038-1101
VL - 46
SP - 1715
EP - 1721
JO - Solid State Electronics
JF - Solid State Electronics
IS - 11
ER -