Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures

F. Gámiz; J. B. Roldán; J. A. López-Villanueva

doi:10.1155/1998/48528

Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si_1-xGe_x heterostructures

F. Gámiz
, J. B. Roldán
, J. A. López-Villanueva

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

Resumen

Electron transport properties of strained-Si on relaxed Si_1-xGe_x channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.

Idioma original	Inglés
Páginas (desde-hasta)	253-256
Número de páginas	4
Publicación	VLSI Design
Volumen	8
N.º	1-4
DOI	https://doi.org/10.1155/1998/48528
Estado	Publicada - 1 ene. 1998
Publicado de forma externa	Sí

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10.1155/1998/48528

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@article{0b469d7d62364e03b6fd5c52923c11d0,

title = "Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures",

abstract = "Electron transport properties of strained-Si on relaxed Si1-xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.",

keywords = "Conduction effective mass reduction, Electron velocity overshoot, Intervalley scattering rate reduction, Monte Carlo simulation, Strained Si layer",

author = "F. G{\'a}miz and Rold{\'a}n, \{J. B.\} and L{\'o}pez-Villanueva, \{J. A.\}",

year = "1998",

month = jan,

day = "1",

doi = "10.1155/1998/48528",

language = "English",

volume = "8",

pages = "253--256",

journal = "VLSI Design",

issn = "1065-514X",

publisher = "Hindawi Limited",

number = "1-4",

}

TY - JOUR

T1 - Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures

AU - Gámiz, F.

AU - Roldán, J. B.

AU - López-Villanueva, J. A.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Electron transport properties of strained-Si on relaxed Si1-xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.

AB - Electron transport properties of strained-Si on relaxed Si1-xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.

KW - Conduction effective mass reduction

KW - Electron velocity overshoot

KW - Intervalley scattering rate reduction

KW - Monte Carlo simulation

KW - Strained Si layer

UR - https://www.scopus.com/pages/publications/0032315717

U2 - 10.1155/1998/48528

DO - 10.1155/1998/48528

M3 - Article

AN - SCOPUS:0032315717

SN - 1065-514X

VL - 8

SP - 253

EP - 256

JO - VLSI Design

JF - VLSI Design

IS - 1-4