Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si_1-xGe_x heterostructures

INIS

• simulation 100%
• monte carlo method 100%
• transport 100%
• performance 66%
• electrons 66%
• mosfet 66%
• velocity 33%
• strains 33%
• layers 33%
• depth 33%
• simulators 33%
• steady-state conditions 33%
• silicon 33%

Physics

• Field Effect Transistor 100%
• Monte Carlo Method 100%
• Transport Property 50%
• Monte Carlo 50%
• Steady State 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Heterostructures 100%
• Electron Velocity 50%