TY - GEN
T1 - Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs
AU - Gámiz, F.
AU - Roldán, J. B.
AU - López-Villanueva, J. A.
AU - Carceller, J. E.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - The transport properties of very thin double gate SOI MOSFETs, have been studied. We have shown the importance of volume inversion, which greatly reduces the dependence of the electron mobility on the surface scattering mechanisms, and enhances the mobility at high inversion charge concentrations. We have also shown that if the silicon film is extremely thin, electron mobility abruptly decreases due to stronger phonon scattering.
AB - The transport properties of very thin double gate SOI MOSFETs, have been studied. We have shown the importance of volume inversion, which greatly reduces the dependence of the electron mobility on the surface scattering mechanisms, and enhances the mobility at high inversion charge concentrations. We have also shown that if the silicon film is extremely thin, electron mobility abruptly decreases due to stronger phonon scattering.
UR - https://www.scopus.com/pages/publications/84907554763
U2 - 10.1109/ESSDERC.1997.194402
DO - 10.1109/ESSDERC.1997.194402
M3 - Conference contribution
AN - SCOPUS:84907554763
T3 - European Solid-State Device Research Conference
SP - 208
EP - 211
BT - European Solid-State Device Research Conference
A2 - Grunbacher, H.
PB - IEEE Computer Society
T2 - 27th European Solid-State Device Research Conference, ESSDERC 1997
Y2 - 22 September 1997 through 24 September 1997
ER -