Optoelectronic properties in InAs/GaAs quantum dots arrays systems

  • A. Luque Rodríguez
  • , S. Rodríguez-Bolívar
  • , F. M. Gómez-Campos
  • , J. A.López Villanueva
  • , J. A.Jiménez Tejada
  • , T. García
  • , J. E. Carceller

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

A study of the physics of electronic states in cubic InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the size and density of the quantum dots. The effect of strain is also taken into account in the simulations. The photon-electron absorption coefficient is obtained for different quantum dot configurations and different light polarization as well.

Idioma originalInglés
Título de la publicación alojadaProceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
DOI
EstadoPublicada - 12 may. 2011
Publicado de forma externa
Evento8th Spanish Conference on Electron Devices, CDE 2011 - Palma de Mallorca, Espana
Duración: 8 feb. 201111 feb. 2011

Serie de la publicación

NombreProceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

Conferencia

Conferencia8th Spanish Conference on Electron Devices, CDE 2011
País/TerritorioEspana
CiudadPalma de Mallorca
Período8/02/1111/02/11

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