Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

J. B. Roldán; F. Gámiz; J. A. López-Villanueva; P. Cartujo; A. Godoy

doi:10.1109/16.954492

Strained-Si on Si_1-xGe_x MOSFET inversion layer centroid modeling

J. B. Roldán
, F. Gámiz
, J. A. López-Villanueva
, P. Cartujo
, A. Godoy

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

13 Citas (Scopus)

Resumen

An accurate model for the inversion charge centroid of strained-Si on Si_1-xGe_x metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simulators by means of a corrected gate-oxide width can be easily performed making use of this new model.

Idioma original	Inglés
Páginas (desde-hasta)	2447-2449
Número de páginas	3
Publicación	IEEE Transactions on Electron Devices
Volumen	48
N.º	10
DOI	https://doi.org/10.1109/16.954492
Estado	Publicada - 1 oct. 2001
Publicado de forma externa	Sí

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abstract = "An accurate model for the inversion charge centroid of strained-Si on Si1-xGex metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simulators by means of a corrected gate-oxide width can be easily performed making use of this new model.",

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AU - Gámiz, F.

AU - López-Villanueva, J. A.

AU - Cartujo, P.

AU - Godoy, A.

PY - 2001/10/1

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KW - Inversion layers

KW - MOSFETs

KW - SiGe

KW - Simulation

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